2N7000

更新时间： 2024-11-08 22:12:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关
页数	文件大小	规格书
14页	538K
描述
N-Channel Enhancement Mode Field Effect Transistor

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替代型号

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2N7000 数据手册

November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

High density cell design for low R_DS(ON)

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 400mA DC and can deliver

pulsed currents up to 2A. These products are particularly

suited for low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and other

switching applications.

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

___________________________________________________________________________________________

TO-92

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

2N7000

2N7002

NDS7002A

Symbol

Parameter

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

±20

- Non Repetitive (tp < 50µs)

±40

115

800

200

1.6

I_D

Maximum Drain Current - Continuous

- Pulsed

200

500

400

3.2

280

1500

P_D

Maximum Power Dissipation

Derated above 25^oC

300

mW/°C

°C

2.4

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

-65 to 150

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

625

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

312.5

417

°C/W

2N7000.SAM Rev. A1

12 3 4 5 6 7...14

中文翻译

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2N7000 替代型号

型号	品牌	替代类型	描述	数据表
2N7000_D26Z	FAIRCHILD	类似代替	N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPAC
2N7000TA	FAIRCHILD	类似代替	Advanced Small Signal MOSFET
2N7000BU	FAIRCHILD	类似代替	Advanced Small Signal MOSFET

与2N7000相关器件

型号	品牌	获取价格	描述	数据表
2N7000/D	ETC	获取价格	Small Signal MOSFET 200 mAmps， 60 Volts
2N7000/D10Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D11Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D27Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D29Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D74Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/E7	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 300MA I(D) \| TO-226AA
2N7000_07	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
2N7000_07	STMICROELECTRONICS	获取价格	N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-
2N7000_07	ONSEMI	获取价格	Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS

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