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2N7000 PDF预览

2N7000

更新时间: 2024-11-30 12:39:51
品牌 Logo 应用领域
CALOGIC 晶体晶体管开关
页数 文件大小 规格书
2页 29K
描述
N-Channel Enhancement-Mode MOS Transistor

2N7000 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.45
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.2 A最大漏极电流 (ID):0.2 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

2N7000 数据手册

 浏览型号2N7000的Datasheet PDF文件第2页 
N-Channel Enhancement-Mode  
MOS Transistor  
CORPORATION  
2N7000 / BS170L  
DESCRIPTION  
ORDERING INFORMATION  
The 2N7000 utilizes Calogic’s vertical DMOS technology. The  
device is well suited for switching applications where BV of  
60V and low on resistance (under 5 ohms) are required. The  
2N7000 is housed in a plastic TO-92 package.  
Part  
Package  
Temperature Range  
2N7000  
BS170L  
Plastic TO-92  
Plastic TO-92  
-55oC to +150oC  
-55oC to +150oC  
-55oC to +150oC  
X2N7000 Sorted Chips in Carriers  
PIN CONFIGURATION  
2N7000  
3
3
1
2
3
SOURCE  
GATE  
DRAIN  
2
1
TO-92  
(TO-226AA)  
2
BOTTOM VIEW  
1
BS170L  
3
2
1
2
DRAIN  
GATE  
3
SOURCE  
3
2
1
1
BOTTOM VIEW  
CD5  
PRODUCT SUMMARY  
V(BR)DSS  
(V)  
rDS(ON)  
()  
ID  
(A)  
P/N  
2N7000  
BS170  
60  
60  
5
0.2  
0.5  
5

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