是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.45 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.2 A | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7000/D | ETC |
获取价格 |
Small Signal MOSFET 200 mAmps, 60 Volts | |
2N7000/D10Z | TI |
获取价格 |
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
2N7000/D11Z | TI |
获取价格 |
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
2N7000/D27Z | TI |
获取价格 |
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
2N7000/D29Z | TI |
获取价格 |
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
2N7000/D74Z | TI |
获取价格 |
200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
2N7000/E7 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 300MA I(D) | TO-226AA | |
2N7000_07 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
2N7000_07 | STMICROELECTRONICS |
获取价格 |
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO- | |
2N7000_07 | ONSEMI |
获取价格 |
Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS |