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2N7000 PDF预览

2N7000

更新时间: 2024-12-02 14:55:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
14页 751K
描述
2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure an

2N7000 数据手册

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2N7000  
N-Channel Enhancement-Mode Vertical DMOS FET  
Features  
General Description  
• Free from Secondary Breakdown  
• Low Power Drive Requirement  
• Ease of Paralleling  
The 2N7000 is an Enhancement-mode (normally-off)  
transistor that uses a vertical DMOS structure and a  
well-proven silicon gate manufacturing process. This  
combination produces a device with the power  
handling capabilities of bipolar transistors as well as  
the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of  
all MOS structures, this device is free from thermal  
runaway and thermally induced secondary breakdown.  
• Low CISS and Fast Switching Speeds  
• Excellent Thermal Stability  
• Integral Source-Drain Diode  
• High Input Impedance and High Gain  
Applications  
Microchip’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications  
where very low threshold voltage, high breakdown  
voltage, high input impedance, low input capacitance,  
and fast switching speeds are desired.  
• Motor Controls  
• Converters  
• Amplifiers  
• Switches  
• Power Supply Circuits  
• Drivers (Relays, Hammers, Solenoids, Lamps,  
Memory, Displays, Bipolar Transistors, etc.)  
Package Type  
3-lead TO-92  
(Top view)  
DRAIN  
SOURCE  
GATE  
See Table 3-1 for pin information.  
2021 Microchip Technology Inc.  
DS20005695A-page 1  

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