2N7000

更新时间： 2024-11-30 22:12:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管开关
页数	文件大小	规格书
4页	81K
描述
CASE 29-04, STYLE 22 TO-92 (TO-226AA)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7000 数据手册

Order this document

by 2N7000/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel — Enhancement

Motorola Preferred Device

3 DRAIN

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Drain Source Voltage

Symbol

Value

Unit

Vdc

DSS

CASE 29–04, STYLE 22

TO–92 (TO–226AA)

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–Source Voltage

— Continuous

±20

±40

Vdc

Vpk

— Non–repetitive (t ≤ 50 µs)

GSM

Drain Current

Continuous

Pulsed

mAdc

200

500

Total Power Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Operating and Storage Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

300

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient

θJA

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

—

Vdc

(BR)DSS

= 0, I = 10 µAdc)

Zero Gate Voltage Drain Current

DSS

= 48 Vdc, V

= 0)

—

1.0

µAdc

mAdc

= 0, T = 125°C)

Gate–Body Leakage Current, Forward

(V = 15 Vdc, V = 0)

—

–10

nAdc

GSSF

GSF

(1)

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

3.0

Vdc

GS(th)

= V , I = 1.0 mAdc)

Static Drain–Source On–Resistance

Ohm

DS(on)

= 10 Vdc, I = 0.5 Adc)

—

5.0

6.0

= 4.5 Vdc, I = 75 mAdc)

Drain–Source On–Voltage

Vdc

DS(on)

= 10 Vdc, I = 0.5 Adc)

—

2.5

0.45

= 4.5 Vdc, I = 75 mAdc)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4

中文翻译

下载PDF

与2N7000相关器件

型号	品牌	获取价格	描述	数据表
2N7000/D	ETC	获取价格	Small Signal MOSFET 200 mAmps， 60 Volts
2N7000/D10Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D11Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D27Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D29Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/D74Z	TI	获取价格	200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000/E7	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 300MA I(D) \| TO-226AA
2N7000_07	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
2N7000_07	STMICROELECTRONICS	获取价格	N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-
2N7000_07	ONSEMI	获取价格	Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS