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2N6990 PDF预览

2N6990

更新时间: 2024-11-29 22:20:03
品牌 Logo 应用领域
SEMICOA /
页数 文件大小 规格书
1页 32K
描述
Chip Type 2C2222A Geometry 0400 Polarity NPN

2N6990 技术参数

生命周期:Contact Manufacturer包装说明:FLATPACK, R-CDFP-F14
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.31最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:50 V最小直流电流增益 (hFE):30
JESD-30 代码:R-CDFP-F14元件数量:4
端子数量:14最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):300 ns最大开启时间(吨):35 ns

2N6990 数据手册

  
Data Sheet No. 2C2222A  
Generic Packaged Parts:  
Chip Type 2C2222A  
Geometry 0400  
Polarity NPN  
2N2219, 2N2219A, 2N2222,  
2N2222A  
Chip type 2C2222A by Semicoa  
Semiconductors provides perfor-  
mance similar to these devices.  
Product Summary:  
APPLICATIONS: Designed for general  
purpose switching and amplifier applica-  
tions.  
Part Numbers:  
2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL,  
2N2222AUB, SD2222A, SD2222AF, SQ2222A,  
SQ2222AF, 2N5582, 2N6989, 2N6990  
Features: Medium power ratings  
Mechanical Specifications  
Top  
Backside  
Emitter  
Base  
Al - 24 kÅ min.  
Au - 6.5 kÅ nom.  
4.0 mils x 4.0 mils  
4.0 mils x 4.0 mils  
8 mils nominal  
Metallization  
Bonding Pad Size  
Die Thickness  
Chip Area  
20 mils x 20 mils  
Silox Passivated  
Top Surface  
Electrical Characteristics  
TA = 25oC  
Parameter  
BVCEO  
Test conditions  
Min  
40  
Max  
---  
Unit  
V dc  
V dc  
V dc  
nA dc  
---  
IC = 10 mA, IB = 0  
IC = 10 µA, IE = 0  
IE = 10 µA, IC = 0  
VCB = 50 V, IE = 0  
BVCBO  
BVEBO  
ICBO  
75  
---  
6.0  
---  
---  
10  
hFE  
IC = 150 mA dc, VCE = 10 V  
100  
300  
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less  
than 300 µs, duty cycle less than 2%.  

2N6990 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N6990 RAYTHEON

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