Datasheet > 2N6660_07

2N6660_07

更新时间： 2024-11-25 03:56:23

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	396K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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2N6660_07 数据手册

2N6660/2N6661

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral Source-Drain diode

► High input impedance and high gain

► Complementary N- and P-Channel devices

The Supertex 2N6660 and 2N6661 are enhancement-

mode (normally-off) transistors that utilizes a vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturingprocess.Thiscombinationproducesdevices

with the power handling capabilities of bipolar transistors,

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of

all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Applications

► Motor controls

► Converters

► Ampliﬁers

► Switches

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

R_DS(ON)

(max)

(Ω)

I_D(ON)

(min)

(A)

BV_DSS/BV_DGS

(V)

Device

Package

2N6660

2N6661

TO-39

3.0

4.0

1.5

Absolute Maximum Ratings

Parameter

Pin Conﬁguration

Value

BV_DSS

Drain to source voltage

Drain to gate voltage

BV_DGS

Gate to source voltage

20V

Operating and storage temperature

Soldering temperature¹

-55°C to +150°C

+300°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-39

Case: DRAIN

Note 1. Distance of 1.6mm from case for 10 seconds.

12 3

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