是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.17 | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 40 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN (315) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 25 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6034PNP | CDIL |
获取价格 |
SILICON POWER DARLINGTON TRANSISTORS | |
2N6035 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2N6035 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N6035 | NJSEMI |
获取价格 |
COMPLEMENTARY SILICON DARLINGTON TRANSISTORS | |
2N6035 | CDIL |
获取价格 |
SILICON POWER DARLINGTON TRANSISTORS | |
2N6035 | STMICROELECTRONICS |
获取价格 |
MIDIUM POWER DAR;OMGTONS | |
2N6035 | ONSEMI |
获取价格 |
Plastic Darlington Complementary Silicon Power Transistors | |
2N6035 | CENTRAL |
获取价格 |
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | |
2N6035/D | ETC |
获取价格 |
Plastic Darlington Silicon Power Transistors | |
2N6035_06 | ONSEMI |
获取价格 |
Plastic Darlington Complementary Silicon Power Transistors |