Datasheet > 2N6035G

2N6035G

更新时间： 2024-02-27 16:28:06

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管放大器局域网
页数	文件大小	规格书
6页	86K
描述
Plastic Darlington Complementary Silicon Power Transistors

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技术参数
数据手册

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2N6035G 技术参数

生命周期：	Active	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	compliant	风险等级：	5.67
最大集电极电流 (IC)：	4 A	集电极-发射极最大电压：	60 V
配置：	DARLINGTON	最小直流电流增益 (hFE)：	100
JEDEC-95代码：	TO-126	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	25 MHz
Base Number Matches：	1

2N6035G 数据手册

(PNP) 2N6034, 2N6035,

2N6036; (NPN) 2N6038,

2N6039

Plastic Darlington

Complementary Silicon

Power Transistors

http://onsemi.com

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low−speed switching

applications.

4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

Features

40, 60, 80 VOLTS, 40 WATTS

• ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available*

TO−225AA

CASE 77

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N6034

2N6035, 2N6038

2N6036, 2N6039

Vdc

CEO

CBO

EBO

MARKING DIAGRAM

Collector−Base Voltage

2N6034

2N6035, 2N6038

2N6036, 2N6039

Vdc

YWW

N603xG

Emitter−Base Voltage

Collector Current

5.0

Continuous

Peak

4.0

8.0

Adc

Apk

Base Current

100

mAdc

= Year

= Work Week

Total Device Dissipation @ T = 25°C

320

mW/°C

Derate above 25°C

2N603x = Device Code

x = 4, 5, 6, 8, 9

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

= Pb−Free Package

Operating and Storage Junction

Temperature Range

T , T

–65 to

+150

°C

stg

ORDERING INFORMATION

THERMAL CHARACTERISTICS

Characteristic

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Symbol

Max

3.12

83.3

Unit

°C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2006 − Rev. 13

2N6035/D

12 3 4 5 6

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