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2N6035/D PDF预览

2N6035/D

更新时间: 2024-11-19 23:19:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 112K
描述
Plastic Darlington Silicon Power Transistors

2N6035/D 数据手册

 浏览型号2N6035/D的Datasheet PDF文件第2页浏览型号2N6035/D的Datasheet PDF文件第3页浏览型号2N6035/D的Datasheet PDF文件第4页浏览型号2N6035/D的Datasheet PDF文件第5页浏览型号2N6035/D的Datasheet PDF文件第6页浏览型号2N6035/D的Datasheet PDF文件第7页 
ON Semiconductort  
PNP  
2N6035  
Plastic Darlington  
Complementary Silicon Power  
Transistors  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
*
*
2N6036  
NPN  
2N6038  
2N6039  
High DC Current Gain —  
h
FE  
= 2000 (Typ) @ I = 2.0 Adc  
C
*ON Semiconductor Preferred Device  
Collector–Emitter Sustaining Voltage — @ 100 mAdc  
= 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc  
V
CEO(sus)  
DARLINGTON  
4–AMPERE  
(Min) — 2N6036, 2N6039  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60, 80 VOLTS  
Forward Biased Second Breakdown Current Capability  
I
= 1.5 Adc @ 25 Vdc  
S/b  
Monolithic Construction with Built–In Base–Emitter Resistors to  
LimitELeakage Multiplication  
40 WATTS  
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic  
Package  
MAXIMUM RATINGS (1)  
2N6035  
2N6038  
2N6036  
2N6039  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
4.0  
8.0  
CASE 77–09  
TO–225AA TYPE  
Base Current  
I
B
100  
mAdc  
Total Power Dissipation @ T = 25_C  
P
40  
0.32  
Watts  
C
D
Derate above 25_C  
W/_C  
Total Power Dissipation @ T = 25_C  
P
D
1.5  
0.012  
Watts  
A
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
3.12  
83.3  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
JC  
θ
JA  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 9  
2N6035/D  

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