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2N6036 PDF预览

2N6036

更新时间: 2023-12-06 20:02:37
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 502K
描述
4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

2N6036 数据手册

 浏览型号2N6036的Datasheet PDF文件第2页浏览型号2N6036的Datasheet PDF文件第3页浏览型号2N6036的Datasheet PDF文件第4页浏览型号2N6036的Datasheet PDF文件第5页浏览型号2N6036的Datasheet PDF文件第6页浏览型号2N6036的Datasheet PDF文件第7页 
2N6034 2N6035 2N6036  
2N6037 2N6038 2N6039  
PNP  
NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON  
DARLINGTON POWER  
TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037  
series devices are complementary silicon Darlington  
power transistors, manufactured by the epitaxial base  
process, designed for general purpose amplifier and  
switching applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
2N6034 2N6035 2N6036  
C
SYMBOL 2N6037 2N6038 2N6039  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
V
V
V
40  
40  
60  
60  
5.0  
4.0  
8.0  
100  
40  
1.5  
80  
80  
V
V
V
A
A
mA  
W
W
°C  
°C/W  
°C/W  
CBO  
CEO  
EBO  
I
C
I
CM  
I
B
P
P
D
D
Power Dissipation (T =25°C)  
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
83.3  
3.12  
J
stg  
JA  
JC  
Θ
Θ
Thermal Resistance  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
I
V
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=Rated V  
=5.0V  
500  
μA  
CBO  
CEV  
CEV  
CEO  
EBO  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
CB  
CE  
CE  
CE  
EB  
CBO  
, V =1.5V  
CEO BE  
100  
500  
100  
2.0  
μA  
μA  
μA  
mA  
V
V
V
V
V
, V =1.5V, T =125°C  
CEO BE  
CEO  
C
BV  
BV  
BV  
V
V
V
V
h
h
h
I =100mA (2N6034, 2N6037)  
40  
60  
80  
C
I =100mA (2N6035, 2N6038)  
C
I =100mA (2N6036, 2N6039)  
C
I =2.0A, I =8.0mA  
2.0  
3.0  
4.0  
2.8  
C
B
B
B
I =4.0A, I =40mA  
C
I =4.0A, I =40mA  
V
V
C
V
=3.0V, I =2.0A  
CE  
CE  
CE  
CE  
CE  
CB  
CB  
C
V
V
V
V
V
V
=3.0V, I =500mA  
500  
750  
100  
25  
C
=3.0V, I =2.0A  
15K  
FE  
FE  
C
=3.0V, I =4.0A  
C
f
C
C
=10V, I =750mA, f=1.0MHz  
MHz  
pF  
pF  
T
C
=10V, I =0, f=100kHz (PNP)  
200  
100  
ob  
ob  
E
=10V, I =0, f=100kHz (NPN)  
E
R1 (12-March 2014)  

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Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/