Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
(PNP)
(NPN)
SILICON POWER DARLINGTON TRANSISTORS
2N6034, 2N6035, 2N6036
2N6037, 2N6038, 2N6039
TO126
Plastic Package
E
C
B
Designed for General -Purpose Amplifier & Low Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2n6034 2N6035 2N6036 UNIT
2n6037 2N6038 2N6039
VCBO
VCEO
VEBO
IC
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current (Peak Value)
Base Current
Total Power Dissipation @ Tc=25ºC
Derate above 25oC
Total Power Dissipation @ Ta=25ºC
Derate above 25oC
40
40
60
60
80
80
V
V
V
A
A
mA
W
W/ºC
W
5.0
4.0
8.0
100
40
IB
PD
0.32
1.5
PD
0.012
W/ºC
Tj, Tstg
Operating And Storage Junction
Temperature Range
-65 to +150
ºC
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
83.3
3.12
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
VCEO(sus)
IC=100mA, IB=0
Collector Emitter (sus) Voltage
2N6034,2N6037
2N6035, 2N6038
2N6036, 2N6039
40
60
80
V
V
V
Collector Cut off Current
ICEO
VCE=40V, IB=0
VCE=60V, IB=0
VCE=80V, IB=0
2N6034,2N6037
2N6035, 2N6038
2N6036, 2N6039
100
100
100
µA
µA
µA
Continental Device India Limited
Data Sheet
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