Datasheet > 2N6036PNP

2N6036PNP

更新时间： 2022-02-26 10:44:33

品牌	Logo	应用领域
CDIL		/
页数	文件大小	规格书
4页	131K
描述
SILICON POWER DARLINGTON TRANSISTORS

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中文翻译

获取价格

数据手册

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2N6036PNP 数据手册

(PNP)

(NPN)

SILICON POWER DARLINGTON TRANSISTORS

2N6034, 2N6035, 2N6036

2N6037, 2N6038, 2N6039

TO126

Plastic Package

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

100

UNIT

µA

I_CEX

V_CE=40V,V_BE(off)=1.5V

V_CE=60V,V_BE(off)=1.5V

V_CE=80V,V_BE(off)=1.5V

2N6034,2N6037

2N6035, 2N6038

2N6036, 2N6039

µA

Tc=125^OC

V_CE=40V,V_BE(off)=1.5V

V_CE=60V,V_BE(off)=1.5V

V_CE=80V,V_BE(off)=1.5V

2N6034,2N6037

2N6035, 2N6038

2N6036, 2N6039

500

µA

Collector cut off Current

I_CBO

V_CB=40, I_E=0

V_CB=60, I_E=0

V_CB=80, I_E=0

2N6034,2N6037

2N6035, 2N6038

2N6036, 2N6039

0.5

mΑ

I_EBO

h_FE

V_BE=5V,I_C=0

Emitter Cut off Current

DC Current Gain

2.0

I_C=0.5A, V_CE=3V

I_C=2A, V_CE=3V

I_C=4A, V_CE=3V

500

750

100

15000

V_CE(Sat)

I_C=2A,I_B=8mA

I_C=4A,I_B=40mA

Collector Emitter Saturation Voltage

2.0

3.0

V_BE(sat)

V_BE(on)

I_C=4A,I_B=40mA

Base Emitter Saturation Voltage

Base Emitter on Voltage

4.0

2.8

I_C=2A,I_B=V_CE=3V

Dynamic Characteristics

I_C=0.75A,V_CE=10V

f=1MHz

Small Signal Current Gain

Output Capacitance

l hfe l

C_ob

VCB=10V, IE=0,

f=0.1MHz

PNP

NPN

200

100

Continental Device India Limited

Data Sheet

Page 2 of 4

123 4

中文翻译

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