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2N6039 PDF预览

2N6039

更新时间: 2024-11-04 06:18:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 124K
描述
Silicon NPN Power Transistors

2N6039 数据手册

 浏览型号2N6039的Datasheet PDF文件第2页浏览型号2N6039的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6037 2N6038 2N6039  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2N6034/6035/6036  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·Designed for general-purpose amplifier  
and low-speed switching applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
UNIT  
2N6037  
2N6038  
2N6039  
2N6037  
2N6038  
2N6039  
40  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
4
Collector current-peak  
Base current  
8
A
0.1  
40  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
3.12  
/W  

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