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2N6039G

更新时间： 2024-11-03 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 86K
描述
Plastic Darlington Complementary Silicon Power Transistors

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中文翻译

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2N6039G 数据手册

 浏览型号2N6039G的Datasheet PDF文件第2页浏览型号2N6039G的Datasheet PDF文件第3页浏览型号2N6039G的Datasheet PDF文件第4页浏览型号2N6039G的Datasheet PDF文件第5页浏览型号2N6039G的Datasheet PDF文件第6页 
(PNP) 2N6034, 2N6035,  
2N6036; (NPN) 2N6038,  
2N6039  
Plastic Darlington  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
Plastic Darlington complementary silicon power transistors are  
designed for general purpose amplifier and low−speed switching  
applications.  
4.0 AMPERES DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
40, 60, 80 VOLTS, 40 WATTS  
• ESD Ratings: Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Pb−Free Packages are Available*  
TO−225AA  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
2
1
Collector−Emitter Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
V
V
V
40  
60  
80  
Vdc  
CEO  
CBO  
EBO  
MARKING DIAGRAM  
Collector−Base Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
40  
60  
80  
Vdc  
Vdc  
YWW  
2
N603xG  
Emitter−Base Voltage  
Collector Current  
5.0  
Continuous  
Peak  
I
C
4.0  
8.0  
Adc  
Apk  
Base Current  
I
B
100  
mAdc  
Y
WW  
= Year  
= Work Week  
Total Device Dissipation @ T = 25°C  
P
40  
320  
W
mW/°C  
C
D
Derate above 25°C  
2N603x = Device Code  
x = 4, 5, 6, 8, 9  
G
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Symbol  
Max  
3.12  
83.3  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
R
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 13  
2N6035/D  
123456

中文翻译

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2N6039G 替代型号

型号 品牌 替代类型 描述 数据表
BD679ASTU ONSEMI

类似代替

 中等功率 NPN 达林顿双极功率晶体管
MJE803G ONSEMI

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 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
BD679AG ONSEMI

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 Plastic Medium−Power Silicon NPN Darlingtons

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