5秒后页面跳转
捷配首页

Datasheet > 暂无类别数据> 2N6039G
2N6039G PDF预览

2N6039G

更新时间： 2024-11-18 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 86K
描述
Plastic Darlington Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

2N6039G 数据手册

 浏览型号2N6039G的Datasheet PDF文件第2页浏览型号2N6039G的Datasheet PDF文件第3页浏览型号2N6039G的Datasheet PDF文件第4页浏览型号2N6039G的Datasheet PDF文件第5页浏览型号2N6039G的Datasheet PDF文件第6页 
(PNP) 2N6034, 2N6035,  
2N6036; (NPN) 2N6038,  
2N6039  
Plastic Darlington  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
Plastic Darlington complementary silicon power transistors are  
designed for general purpose amplifier and low−speed switching  
applications.  
4.0 AMPERES DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
40, 60, 80 VOLTS, 40 WATTS  
• ESD Ratings: Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Pb−Free Packages are Available*  
TO−225AA  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
2
1
Collector−Emitter Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
V
V
V
40  
60  
80  
Vdc  
CEO  
CBO  
EBO  
MARKING DIAGRAM  
Collector−Base Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
40  
60  
80  
Vdc  
Vdc  
YWW  
2
N603xG  
Emitter−Base Voltage  
Collector Current  
5.0  
Continuous  
Peak  
I
C
4.0  
8.0  
Adc  
Apk  
Base Current  
I
B
100  
mAdc  
Y
WW  
= Year  
= Work Week  
Total Device Dissipation @ T = 25°C  
P
40  
320  
W
mW/°C  
C
D
Derate above 25°C  
2N603x = Device Code  
x = 4, 5, 6, 8, 9  
G
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Symbol  
Max  
3.12  
83.3  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
R
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 13  
2N6035/D  
123456

中文翻译

下载PDF

2N6039G 替代型号

型号 品牌 替代类型 描述 数据表
BD679ASTU ONSEMI

类似代替

 中等功率 NPN 达林顿双极功率晶体管
MJE803G ONSEMI

类似代替

 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
BD679AG ONSEMI

类似代替

 Plastic Medium−Power Silicon NPN Darlingtons

与2N6039G相关器件

型号 品牌 获取价格 描述 数据表
2N6039NPN CDIL

获取价格

 		SILICON POWER DARLINGTON TRANSISTORS
2N6040 BOCA

获取价格

 		DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6040 ONSEMI

获取价格

 		Plastic Medium-Power Complementary Silicon Transistors
2N6040 CENTRAL

获取价格

 		NPN SILICON TRANSISTOR
2N6040 NJSEMI

获取价格

 		POWER DERATING
2N6040 MICROSEMI

获取价格

 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pi
2N6040 TI

获取价格

 		2N6040
2N6040 NSC

获取价格

 		TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,8A I(C),TO-220AB
2N6040 MOSPEC

获取价格

 		POWER TRANSISTORS(10A,80W)
2N6040/D ETC

获取价格

 		Plastic Medium-Power Complementary Silicon Transistors

与2N6039G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证