是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-225 | 包装说明: | ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 2 weeks |
风险等级: | 0.63 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-225 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 40 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJE803 | ONSEMI |
完全替代 |
DARLINGTON POWER TRANSISTORS COMPLEMENTARY | |
BD679AG | ONSEMI |
类似代替 |
Plastic Medium−Power Silicon NPN Darlingtons | |
2N6039G | ONSEMI |
类似代替 |
Plastic Darlington Complementary Silicon Power Transistors |
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MJE803STU | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
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MJE803T | MOSPEC |
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4A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | |
MJE803T | NJSEMI |
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Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box | |
MJE8500 | ISC |
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Silicon NPN Power Transistor | |
MJE850016 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
MJE850016A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla | |
MJE8500A | MOTOROLA |
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2.5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
MJE8500AF | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla |