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MJE803G

更新时间： 2024-11-18 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
6页 85K
描述
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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中文翻译

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MJE803G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-225包装说明：ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：2 weeks
风险等级：0.63Is Samacsys：N
其他特性：BUILT IN BIAS RESISTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：80 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：750JEDEC-95代码：TO-225
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：1 MHzBase Number Matches：1

MJE803G 数据手册

 浏览型号MJE803G的Datasheet PDF文件第2页浏览型号MJE803G的Datasheet PDF文件第3页浏览型号MJE803G的Datasheet PDF文件第4页浏览型号MJE803G的Datasheet PDF文件第5页浏览型号MJE803G的Datasheet PDF文件第6页 
MJE700, MJE702, MJE703  
(PNP) − MJE800, MJE802,  
MJE803 (NPN)  
Plastic Darlington  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
4.0 AMPERE  
DARLINGTON POWER  
TRANSISTORS  
Features  
• High DC Current Gain − h = 2000 (Typ) @ I  
COMPLEMENTARY SILICON  
40 WATT  
FE  
C
= 2.0 Adc  
• Monolithic Construction with Built−in Base−Emitter Resistors to  
Limit Leakage − Multiplication  
50 WATT  
• Choice of Packages − MJE700 and MJE800 Series  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−225  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
V
Vdc  
CEO  
MJE700, MJE800  
MJE702, MJE703, MJE802, MJE803  
60  
80  
3
2
1
Collector−Base Voltage  
V
Vdc  
CB  
EB  
MJE700, MJE800  
60  
80  
MJE702, MJE703, MJE802, MJE803  
Emitter−Base Voltage  
Collector Current  
Base Current  
V
5.0  
4.0  
0.1  
Vdc  
Adc  
Adc  
I
I
C
MARKING DIAGRAM  
B
Total Power Dissipation @ T = 25_C  
P
40  
0.32  
W
mW/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–55 to +150  
stg  
YWW  
JEx0yG  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
6.25  
_C/W  
JC  
Y
= Year  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
WW  
= Work Week  
JEx0y = Device Code  
x = 7 or 8  
y = 0, 2, or 3  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 8  
MJE700/D  
123456

中文翻译

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MJE803G 替代型号

型号 品牌 替代类型 描述 数据表
MJE803 ONSEMI

完全替代

 DARLINGTON POWER TRANSISTORS COMPLEMENTARY
BD679AG ONSEMI

类似代替

 Plastic Medium−Power Silicon NPN Darlingtons
2N6039G ONSEMI

类似代替

 Plastic Darlington Complementary Silicon Power Transistors

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