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2N6040BG PDF预览

2N6040BG

更新时间： 2024-11-18 19:47:15
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
7页 183K
描述
8A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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2N6040BG 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.67外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：100
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

2N6040BG 数据手册

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PNP - 2N6040, 2N6042,  
NPN - 2N6043, 2N6045  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
Plastic medium−power complementary silicon transistors are  
designed for general−purpose amplifier and low−speed switching  
applications.  
DARLINGTON, 8 AMPERES  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
• High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc  
FE  
C
60 − 100 VOLTS, 75 WATTS  
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −  
V
= 60 Vdc (Min) − 2N6040, 2N6043  
CEO(sus)  
= 100 Vdc (Min) − 2N6042, 2N6045  
• Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.0 Vdc (Max) @ I = 4.0 Adc − 2N6043,44  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc − 2N6042, 2N6045  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings:  
Human Body Model, 3B > 8000 V  
Machine Model, C > 400 V  
TO−220AB  
CASE 221A−09  
STYLE 1  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Collector−Emitter Voltage  
2N6040  
V
CEO  
60  
Vdc  
2N6043  
2N6042  
2N6045  
100  
Collector−Base Voltage  
2N6040  
2N6043  
2N6042  
2N6045  
V
CB  
60  
Vdc  
100  
2N604xG  
AYWW  
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
Collector Current  
Continuous  
Peak  
I
8.0  
16  
C
Base Current  
I
B
120  
mAdc  
2N604x = Device Code  
x = 0, 2, 3, or 5  
Total Power Dissipation @ T = 25°C  
P
D
75  
0.60  
W
W/°C  
C
Derate above 25°C  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 9  
2N6040/D  
 
1234567

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