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2N6040G

更新时间： 2024-11-18 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 95K
描述
Plastic Medium−Power Complementary Silicon Transistors

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中文翻译

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2N6040G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.68其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：1000JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：75 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHzBase Number Matches：1

2N6040G 数据手册

 浏览型号2N6040G的Datasheet PDF文件第2页浏览型号2N6040G的Datasheet PDF文件第3页浏览型号2N6040G的Datasheet PDF文件第4页浏览型号2N6040G的Datasheet PDF文件第5页浏览型号2N6040G的Datasheet PDF文件第6页 
PNP − 2N6040, 2N6042,  
NPN − 2N6043, 2N6045  
2N6043 and 2N6045 are Preferred Devices  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
Plastic medium−power complementary silicon transistors are  
designed for general−purpose amplifier and low−speed switching  
applications.  
DARLINGTON, 8 AMPERES  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
• High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc  
FE  
C
60 − 100 VOLTS, 75 WATTS  
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −  
V
= 60 Vdc (Min) − 2N6040, 2N6043  
CEO(sus)  
= 100 Vdc (Min) − 2N6042, 2N6045  
• Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.0 Vdc (Max) @ I = 4.0 Adc − 2N6043,44  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc − 2N6042, 2N6045  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
TO−220AB  
CASE 221A−09  
STYLE 1  
• ESD Ratings:  
Human Body Model, 3B > 8000 V  
1
Machine Model, C > 400 V  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (Note 1)  
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N6040  
V
CEO  
60  
Vdc  
2N6043  
2N6042  
2N6045  
100  
Collector−Base Voltage  
2N6040  
2N6043  
2N6042  
2N6045  
V
CB  
60  
Vdc  
100  
2N604xG  
AYWW  
Emitter−Base Voltage  
Collector Current  
V
5.0  
Vdc  
Adc  
EB  
Continuous  
Peak  
I
8.0  
16  
C
Base Current  
I
B
120  
mAdc  
2N604x = Device Code  
x = 0, 2, 3, or 5  
Total Power Dissipation @ T = 25°C  
P
75  
0.60  
W
W/°C  
C
D
Derate above 25°C  
A
Y
= Assembly Location  
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
°C  
stg  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 7  
2N6040/D  
 
123456

中文翻译

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2N6040G 替代型号

型号 品牌 替代类型 描述 数据表
TIP32CG ONSEMI

类似代替

 Complementary Silicon Plastic Power Transistors
TIP41CG ONSEMI

类似代替

 Complementary Silicon Plastic Power Transistors
2N6040 ONSEMI

类似代替

 Plastic Medium-Power Complementary Silicon Transistors

与2N6040G相关器件

型号 品牌 获取价格 描述 数据表
2N6040L MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2N6040LEADFREE CENTRAL

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 		Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
2N6040S MOTOROLA

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 		8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6040T MOTOROLA

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 		8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6040U MOTOROLA

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 		8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6040U2 MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2N6040UA MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2N6040WD MOTOROLA

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 		8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6041 NJSEMI

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 		POWER DERATING
2N6041 MICROSEMI

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 		Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pi

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