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2N6040LEADFREE PDF预览

2N6040LEADFREE

更新时间: 2024-11-03 20:43:59
品牌 Logo 应用领域
CENTRAL 局域网放大器晶体管
页数 文件大小 规格书
2页 260K
描述
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2N6040LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.18
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6040LEADFREE 数据手册

 浏览型号2N6040LEADFREE的Datasheet PDF文件第2页 
2N6040 2N6041 2N6042 PNP  
2N6043 2N6044 2N6045 NPN  
www.centralsemi.com  
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N6040 and  
2N6043 Series types are Complementary Silicon  
Power Transistors, manufactured by the epitaxial  
base process, designed for general purpose amplifier  
applications.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
2N6040  
2N6043  
60  
2N6041  
2N6044  
80  
2N6042  
2N6045  
100  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
CBO  
CEO  
EBO  
60  
80  
5.0  
100  
V
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
I
8.0  
A
C
I
16  
A
CM  
I
120  
mA  
W
B
Power Dissipation  
P
75  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
1.67  
°C  
°C/W  
J
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
20  
UNITS  
µA  
µA  
µA  
µA  
mA  
V
I
I
I
I
I
V
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=Rated V  
=5.0V  
CBO  
CEV  
CEV  
CEO  
EBO  
CB  
CE  
CE  
CE  
EB  
CBO  
, V  
=1.5V  
=1.5V, T =150°C  
20  
CEO BE(OFF)  
, V  
200  
20  
CEO BE(OFF)  
C
CEO  
2.0  
BV  
BV  
BV  
I =100mA (2N6040, 2N6043)  
60  
80  
CEO  
CEO  
C
I =100mA (2N6041, 2N6044)  
V
C
I =100mA (2N6042, 2N6045)  
100  
V
CEO  
C
V
V
V
V
V
I =4.0A, I =16mA (2N6040, 2N6041, 2N6043, 2N6044)  
2.0  
2.0  
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =3.0A, I =12mA (2N6042, 2N6045)  
V
C
B
I =8.0A, I =80mA  
4.0  
V
C
B
I =8.0A, I =80mA  
4.5  
V
C
B
V
=4.0V, I =4.0A  
2.8  
V
CE  
CE  
CE  
CE  
C
h
h
h
V
V
V
=4.0V, I =4.0A (2N6040, 2N6041, 2N6043, 2N6044)  
1,000  
1,000  
100  
20,000  
20,000  
C
=4.0V, I =3.0A (2N6042, 2N6045)  
FE  
C
=4.0V, I =8.0A  
FE  
C
R1 (16-November 2009)  

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