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2N6040/D PDF预览

2N6040/D

更新时间: 2024-01-16 11:27:40
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 114K
描述
Plastic Medium-Power Complementary Silicon Transistors

2N6040/D 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:75 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6040/D 数据手册

 浏览型号2N6040/D的Datasheet PDF文件第2页浏览型号2N6040/D的Datasheet PDF文件第3页浏览型号2N6040/D的Datasheet PDF文件第4页浏览型号2N6040/D的Datasheet PDF文件第5页浏览型号2N6040/D的Datasheet PDF文件第6页浏览型号2N6040/D的Datasheet PDF文件第7页 
ON Semiconductort  
PNP  
2N6040  
Plastic Medium-Power  
Complementary Silicon  
Transistors  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
thru  
*
2N6042  
NPN  
2N6043  
High DC Current Gain —  
h
FE  
= 2500 (Typ) @ I = 4.0 Adc  
C
thru  
Collector–Emitter Sustaining Voltage — @ 100 mAdc —  
V
= 60 Vdc (Min) — 2N6040, 2N6043  
= 80 Vdc (Min) — 2N6041, 2N6044  
= 100 Vdc (Min) — 2N6042, 2N6045  
CEO(sus)  
*
2N6045  
*ON Semiconductor Preferred Device  
Low Collector–Emitter Saturation Voltage —  
= 2.0 Vdc (Max) @ I = 4.0 Adc — 2N6040,41, 2N6043,44  
V
CE(sat)  
C
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60–80–100 VOLTS  
75 WATTS  
= 2.0 Vdc (Max) @ I = 3.0 Adc — 2N6042, 2N6045  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
MAXIMUM RATINGS (1)  
2N6040 2N6041 2N6042  
2N6043 2N6044 2N6045  
Rating  
Symbol  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
60  
60  
80  
80  
100  
100  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
V
5.0  
EB  
Collector Current — Continuous  
Peak  
I
C
8.0  
16  
Base Current  
I
B
120  
mAdc  
Total Power Dissipation @ T = 25_C  
P
75  
0.60  
Watts  
C
D
Derate above 25_C  
W/_C  
Operating and Storage Junction,  
Temperature Range  
T , T  
J
–65 to +150  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
_C/W  
_C/W  
CASE 221A–09  
TO–220AB  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
1.67  
57  
JC  
θ
JA  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 3  
2N6040/D  

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