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2N6040/D PDF预览

2N6040/D

更新时间: 2024-01-03 05:26:01
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 114K
描述
Plastic Medium-Power Complementary Silicon Transistors

2N6040/D 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP功耗环境最大值:75 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6040/D 数据手册

 浏览型号2N6040/D的Datasheet PDF文件第1页浏览型号2N6040/D的Datasheet PDF文件第2页浏览型号2N6040/D的Datasheet PDF文件第3页浏览型号2N6040/D的Datasheet PDF文件第5页浏览型号2N6040/D的Datasheet PDF文件第6页浏览型号2N6040/D的Datasheet PDF文件第7页 
2N6040 thru 2N6042 2N6043 thru 2N6045  
5.0  
t
s
3.0  
2.0  
V
CC  
-ā30 V  
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS  
B
C
D MUST BE FAST RECOVERY TYPE, eg:  
1
t
f
ă1N5825 USED ABOVE I 100 mA  
B
1.0  
R
C
SCOPE  
ăMSD6100 USED BELOW I 100 mA  
B
0.7  
0.5  
TUT  
V
2
approx  
+ā8.0 V  
R
B
0.3  
0.2  
t
r
D
1
V
= 30 V  
I /I = 250  
CC  
8.0 k  
51  
Ă120  
0
C B  
I
= I  
V
1
approx  
-12 V  
B1 B2  
+ā4.0 V  
0.1  
0.07  
0.05  
T = 25°C  
J
PNP  
NPN  
25 µs  
t @ V  
d
= 0 V  
BE(off)  
for t and t , D is disconnected  
d
r
1
and V = 0  
2
t , t 10 ns  
r
f
DUTY CYCLE = 1.0%  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
For NPN test circuit reverse all polarities and D1.  
I , COLLECTOR CURRENT (AMP)  
C
Figure 2. Switching Times Equivalent Circuit  
Figure 3. Switching Times  
1.0  
0.7  
0.5  
D = 0.5  
0.3  
0.2  
0.2  
0.1  
P
(pk)  
θ
θ
(t) = r(t) θ  
JC  
= 1.67°C/W  
JC  
JC  
0.1  
0.07  
0.05  
0.05  
0.02  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
1
t
2
T
- T = P θ (t)  
C (pk) JC  
J(pk)  
0.03  
0.02  
0.01  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.01  
0.01  
0.02 0.03 0.05  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30  
50  
100  
200 300 500  
1000  
t, TIME OR PULSE WIDTH (ms)  
Figure 4. Thermal Response  
http://onsemi.com  
4

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