Datasheet > 2N6040/D

2N6040/D

更新时间： 2024-01-21 14:36:40

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	114K
描述
Plastic Medium-Power Complementary Silicon Transistors

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技术参数
数据手册

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2N6040/D 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.67
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	60 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	PNP	功耗环境最大值：	75 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

2N6040/D 数据手册

2N6040 thru 2N6042 2N6043 thru 2N6045

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I – V

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

100 µs

5.0

500 µs

1.0Ăms

5.0Ăms

2.0

1.0

0.5

T = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED @ T = 25°C

The data of Figure 5 is based on T

variable depending on conditions. Second breakdown pulse

= 150_C; T is

J(pk)

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED V

0.2

0.1

limits are valid for duty cycles to 10% provided T

J(pk)

CEO

< 150_C.

may be calculated from the data in

J(pk)

2N6040, 2N6043

2N6041, 2N6044

2N6045

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05

0.02

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

300

10,000

5000

T = 25°C

3000

2000

200

1000

500

T = 25°C

100

300

200

= 4.0 Vdc

I = 3.0 Adc

100

PNP

NPN

PNP

NPN

1.0

0.1

2.0

5.0 10

50 100 200

500 1000

0.2

0.5

1.0 2.0

5.0 10

50 100

f, FREQUENCY (kHz)

V , REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Figure 6. Small–Signal Current Gain

http://onsemi.com

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