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2N6040AN PDF预览

2N6040AN

更新时间: 2024-11-04 08:54:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 418K
描述
8A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

2N6040AN 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector–Emitter Sustaining Voltage — @ 100 mAdc —  
h
FE  
C
V
V
V
= 60 Vdc (Min) — 2N6040, 2N6043  
= 80 Vdc (Min) — 2N6041, 2N6044  
= 100 Vdc (Min) — 2N6042, 2N6045  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 4.0 Adc — 2N6040,41, 2N6043,44  
CE(sat)  
CE(sat)  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc — 2N6042, 2N6045  
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
*Motorola Preferred Device  
MAXIMUM RATINGS (1)  
2N6040 2N6041 2N6042  
2N6043 2N6044 2N6045  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
6080100 VOLTS  
75 WATTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
16  
Base Current  
I
B
120  
mAdc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
75  
0.60  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.2  
0.0175  
Watts  
W/ C  
Operating and Storage Junction,  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
θ
1.67  
57  
JC  
JA  
CASE 221A–06  
TO–220AB  
T
A
T
C
4.0 80  
3.0 60  
2.0 40  
1.0 20  
T
C
T
A
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–89  
Motorola Bipolar Power Transistor Device Data  

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