Datasheet > 2N6040_06

2N6040_06

更新时间： 2024-11-03 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	95K
描述
Plastic Medium−Power Complementary Silicon Transistors

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中文翻译

获取价格

数据手册

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2N6040_06 数据手册

PNP − 2N6040, 2N6042,

NPN − 2N6043, 2N6045

2N6043 and 2N6045 are Preferred Devices

Plastic Medium−Power

Complementary Silicon

Transistors

http://onsemi.com

Plastic medium−power complementary silicon transistors are

designed for general−purpose amplifier and low−speed switching

applications.

DARLINGTON, 8 AMPERES

COMPLEMENTARY SILICON

POWER TRANSISTORS

Features

• High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc

60 − 100 VOLTS, 75 WATTS

• Collector−Emitter Sustaining Voltage − @ 100 mAdc −

= 60 Vdc (Min) − 2N6040, 2N6043

CEO(sus)

= 100 Vdc (Min) − 2N6042, 2N6045

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 2.0 Vdc (Max) @ I = 4.0 Adc − 2N6043,44

= 2.0 Vdc (Max) @ I = 3.0 Adc − 2N6042, 2N6045

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Epoxy Meets UL 94 V−0 @ 0.125 in

TO−220AB

CASE 221A−09

STYLE 1

• ESD Ratings:

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

MARKING DIAGRAM

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N6040

CEO

Vdc

2N6043

2N6042

2N6045

100

Collector−Base Voltage

2N6040

2N6043

2N6042

2N6045

Vdc

100

2N604xG

AYWW

Emitter−Base Voltage

Collector Current

5.0

Vdc

Adc

Continuous

Peak

8.0

Base Current

120

mAdc

2N604x = Device Code

x = 0, 2, 3, or 5

Total Power Dissipation @ T = 25°C

0.60

W/°C

Derate above 25°C

= Assembly Location

= Year

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

°C

stg

= Work Week

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2006 − Rev. 7

2N6040/D

12 3 4 5 6

中文翻译

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与2N6040_06相关器件

型号	品牌	获取价格	描述	数据表
2N6040_07	ONSEMI	获取价格	Plastic Medium-Power Complementary Silicon Transistors
2N604016	MOTOROLA	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N604016A	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2N6040AF	MOTOROLA	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB
2N6040AN	ONSEMI	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
2N6040AS	ONSEMI	获取价格	TRANSISTOR 8 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur
2N6040BA	ONSEMI	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
2N6040BG	ONSEMI	获取价格	8A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
2N6040BS	ONSEMI	获取价格	TRANSISTOR 8 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur
2N6040BU	ONSEMI	获取价格	TRANSISTOR 8 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pur

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