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2N6038 PDF预览

2N6038

更新时间: 2024-11-04 06:18:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 124K
描述
Silicon NPN Power Transistors

2N6038 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2N6038 数据手册

 浏览型号2N6038的Datasheet PDF文件第2页浏览型号2N6038的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6037 2N6038 2N6039  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2N6034/6035/6036  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·Designed for general-purpose amplifier  
and low-speed switching applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
UNIT  
2N6037  
2N6038  
2N6039  
2N6037  
2N6038  
2N6039  
40  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
4
Collector current-peak  
Base current  
8
A
0.1  
40  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
3.12  
/W  

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