Datasheet > 2N6038

2N6038

更新时间： 2024-11-20 06:18:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	124K
描述
Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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2N6038 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Base Number Matches：	1

2N6038 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6037 2N6038 2N6039

DESCRIPTION

·With TO-126 package

·Complement to type 2N6034/6035/6036

·DARLINGTON

·High DC current gain

APPLICATIONS

·Designed for general-purpose amplifier

and low-speed switching applications

PINNING(see Fig.2)

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6037

2N6038

2N6039

2N6037

2N6038

2N6039

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

0.1

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

3.12

℃/W

12 3

中文翻译

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2N6038G	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
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