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2N6038G PDF预览

2N6038G

更新时间: 2024-11-03 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 86K
描述
Plastic Darlington Complementary Silicon Power Transistors

2N6038G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.74
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):25 MHz
Base Number Matches:1

2N6038G 数据手册

 浏览型号2N6038G的Datasheet PDF文件第2页浏览型号2N6038G的Datasheet PDF文件第3页浏览型号2N6038G的Datasheet PDF文件第4页浏览型号2N6038G的Datasheet PDF文件第5页浏览型号2N6038G的Datasheet PDF文件第6页 
(PNP) 2N6034, 2N6035,  
2N6036; (NPN) 2N6038,  
2N6039  
Plastic Darlington  
Complementary Silicon  
Power Transistors  
http://onsemi.com  
Plastic Darlington complementary silicon power transistors are  
designed for general purpose amplifier and low−speed switching  
applications.  
4.0 AMPERES DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
40, 60, 80 VOLTS, 40 WATTS  
ESD Ratings: Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
Epoxy Meets UL 94 V−0 @ 0.125 in  
Pb−Free Packages are Available*  
TO−225AA  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
2
1
Collector−Emitter Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
V
V
V
40  
60  
80  
Vdc  
CEO  
CBO  
EBO  
MARKING DIAGRAM  
Collector−Base Voltage  
2N6034  
2N6035, 2N6038  
2N6036, 2N6039  
40  
60  
80  
Vdc  
Vdc  
YWW  
2
N603xG  
Emitter−Base Voltage  
Collector Current  
5.0  
Continuous  
Peak  
I
C
4.0  
8.0  
Adc  
Apk  
Base Current  
I
B
100  
mAdc  
Y
WW  
= Year  
= Work Week  
Total Device Dissipation @ T = 25°C  
P
40  
320  
W
mW/°C  
C
D
Derate above 25°C  
2N603x = Device Code  
x = 4, 5, 6, 8, 9  
G
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
W
mW/°C  
C
Derate above 25°C  
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
Characteristic  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Symbol  
Max  
3.12  
83.3  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
R
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 13  
2N6035/D  

2N6038G 替代型号

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MJE800STU FAIRCHILD

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