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2n6037

更新时间: 2024-11-05 02:54:23
品牌 Logo 应用领域
CDIL 局域网晶体管
页数 文件大小 规格书
4页 131K
描述
SILICON POWER DARLINGTON TRANSISTORS

2n6037 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.56最大集电极电流 (IC):4 A
配置:DARLINGTON最小直流电流增益 (hFE):750
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):40 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

2n6037 数据手册

 浏览型号2n6037的Datasheet PDF文件第2页浏览型号2n6037的Datasheet PDF文件第3页浏览型号2n6037的Datasheet PDF文件第4页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
(PNP)  
(NPN)  
SILICON POWER DARLINGTON TRANSISTORS  
2N6034, 2N6035, 2N6036  
2N6037, 2N6038, 2N6039  
TO126  
Plastic Package  
E
C
B
Designed for General -Purpose Amplifier & Low Speed Switching Applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
2n6034 2N6035 2N6036 UNIT  
2n6037 2N6038 2N6039  
VCBO  
VCEO  
VEBO  
IC  
Collector -Base Voltage  
Collector -Emitter Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Collector Current (Peak Value)  
Base Current  
Total Power Dissipation @ Tc=25ºC  
Derate above 25oC  
Total Power Dissipation @ Ta=25ºC  
Derate above 25oC  
40  
40  
60  
60  
80  
80  
V
V
V
A
A
mA  
W
W/ºC  
W
5.0  
4.0  
8.0  
100  
40  
IB  
PD  
0.32  
1.5  
PD  
0.012  
W/ºC  
Tj, Tstg  
Operating And Storage Junction  
Temperature Range  
-65 to +150  
ºC  
THERMAL RESISTANCE  
Junction to ambient  
Junction to case  
Rth(j-a)  
Rth(j-c)  
83.3  
3.12  
ºC/W  
ºC/W  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
VCEO(sus)  
IC=100mA, IB=0  
Collector Emitter (sus) Voltage  
2N6034,2N6037  
2N6035, 2N6038  
2N6036, 2N6039  
40  
60  
80  
V
V
V
Collector Cut off Current  
ICEO  
VCE=40V, IB=0  
VCE=60V, IB=0  
VCE=80V, IB=0  
2N6034,2N6037  
2N6035, 2N6038  
2N6036, 2N6039  
100  
100  
100  
µA  
µA  
µA  
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

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