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2N6038 PDF预览

2N6038

更新时间: 2024-11-03 22:12:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管放大器局域网
页数 文件大小 规格书
8页 114K
描述
Plastic Darlington Complementary Silicon Power Transistors

2N6038 数据手册

 浏览型号2N6038的Datasheet PDF文件第2页浏览型号2N6038的Datasheet PDF文件第3页浏览型号2N6038的Datasheet PDF文件第4页浏览型号2N6038的Datasheet PDF文件第5页浏览型号2N6038的Datasheet PDF文件第6页浏览型号2N6038的Datasheet PDF文件第7页 
ON Semiconductor)  
PNP  
2N6035  
Plastic Darlington  
Complementary Silicon Power  
Transistors  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
*
*
2N6036  
NPN  
2N6038  
2N6039  
High DC Current Gain —  
h
= 2000 (Typ) @ I = 2.0 Adc  
FE  
Collector–Emitter Sustaining Voltage — @ 100 mAdc  
= 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc  
C
*ON Semiconductor Preferred Device  
V
CEO(sus)  
DARLINGTON  
4–AMPERE  
(Min) — 2N6036, 2N6039  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60, 80 VOLTS  
Forward Biased Second Breakdown Current Capability  
I
= 1.5 Adc @ 25 Vdc  
S/b  
Monolithic Construction with Built–In Base–Emitter Resistors to  
Limit Leakage Multiplication  
E
40 WATTS  
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic  
Package  
MAXIMUM RATINGS (1)  
2N6035  
2N6038  
2N6036  
2N6039  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
STYLE 1:  
V
CB  
EB  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
3
V
5.0  
2
1
Collector Current — Continuous  
Peak  
I
C
4.0  
8.0  
CASE 77–09  
TO–225AA TYPE  
Base Current  
I
100  
mAdc  
B
Total Power Dissipation @ T = 25_C  
P
40  
0.32  
Watts  
C
D
Derate above 25_C  
W/_C  
Total Power Dissipation @ T = 25_C  
P
1.5  
0.012  
Watts  
A
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
stg  
–65 to +150  
_C  
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
3.12  
83.3  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(1) Indicates JEDEC Registered Data.  
θ
JC  
θ
JA  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N6035/D  

2N6038 替代型号

型号 品牌 替代类型 描述 数据表
2N6038LEADFREE CENTRAL

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