Datasheet > 2N6036_09

2N6036_09

更新时间： 2024-11-04 07:28:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
10页	386K
描述
Complementary power Darlington transistors

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中文翻译

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数据手册

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2N6036_09 数据手册

2N6036

2N6039

Complementary power Darlington transistors

Features

■ Good h linearity

■ High f frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Applications

■ Linear and switching industrial equipment

SOT-32

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration.

Figure 1.

Internal schematic diagram

R typ. = 15 kΩ

R typ. = 100 Ω

Table 1.

Device summary

Order codes

Marking

Polarity

Package

Packaging

2N6036

2N6039

2N6036

2N6039

NPN

PNP

SOT-32

Tube

May 2009

Doc ID 5064 Rev 5

1/10

www.st.com

12 3 4 5 6 7...10

中文翻译

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2N6037	ISC	获取价格	Silicon NPN Power Transistors
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2n6037	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6037LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
2N6037NPN	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6038	STMICROELECTRONICS	获取价格	MIDIUM POWER DAR;OMGTONS