Datasheet > 2N6035_08

2N6035_08

更新时间： 2024-11-20 07:28:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	128K
描述
Plastic Darlington Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6035_08 数据手册

(PNP) 2N6034, 2N6035,

2N6036; (NPN) 2N6038,

2N6039

Plastic Darlington

Complementary Silicon

Power Transistors

http://onsemi.com

Plastic Darlington complementary silicon power transistors are

designed for general purpose amplifier and low−speed switching

applications.

4.0 AMPERES DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

Features

40, 60, 80 VOLTS, 40 WATTS

• ESD Ratings: Machine Model, C; > 400 V

Human Body Model, 3B; > 8000 V

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available*

COLLECTOR 2,4

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

EMITTER 1

Collector−Emitter Voltage

2N6034

2N6035, 2N6038

2N6036, 2N6039

CEO

CBO

EBO

Vdc

Collector−Base Voltage

2N6034

2N6035, 2N6038

2N6036, 2N6039

Vdc

TO−225AA

CASE 77

STYLE 1

Emitter−Base Voltage

5.0

Collector Current

Continuous

Peak

4.0

8.0

Adc

Apk

Base Current

100

mAdc

Total Device Dissipation @ T = 25°C

320

mW/°C

MARKING DIAGRAM

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

YWW

N603xG

Operating and Storage Junction

Temperature Range

T , T

–65 to

+150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

3.12

83.3

Unit

°C/W

= Year

= Work Week

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

2N603x = Device Code

x = 4, 5, 6, 8, 9

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

September, 2008 − Rev. 14

2N6035/D

12 3 4 5 6

中文翻译

下载PDF

与2N6035_08相关器件

型号	品牌	获取价格	描述	数据表
2N6035G	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6035LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2N6035PNP	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6036	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6036	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
2N6036	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6036	MCC	获取价格	PNP Darlington Power Transistor
2N6036	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6036	ISC	获取价格	Silicon PNP Power Transistors
2N6036	NJSEMI	获取价格	SILICON DARLINGTON POWER TRANSISTOR