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2N6036 PDF预览

2N6036

更新时间: 2024-11-24 06:18:39
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管放大器局域网
页数 文件大小 规格书
3页 124K
描述
Silicon PNP Power Transistors

2N6036 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2N6036 数据手册

 浏览型号2N6036的Datasheet PDF文件第2页浏览型号2N6036的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6034 2N6035 2N6036  
DESCRIPTION  
·With TO-126 package  
·Complement to type 2N6037/6038/6039  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·Designed for general-purpose amplifier  
and low-speed switching applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Emitter  
2
Collector  
Base  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-40  
UNIT  
2N6034  
2N6035  
2N6036  
2N6034  
2N6035  
2N6036  
VCBO  
Collector-base voltage  
Open emitter  
V
-60  
-80  
-40  
VCEO  
Collector-emitter voltage  
Open base  
V
-60  
-80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
-4  
Collector current-peak  
Base current  
-8  
A
-0.1  
40  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
3.12  
/W  

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Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/