Datasheet > 2N6036_00

2N6036_00

更新时间： 2024-11-04 03:56:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	246K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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2N6036_00 数据手册

2N6036

2N6039

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

■

2N6036 IS A STMicroelectronics

PREFERRED SALESTYPE

■

COMPLEMENTARY PNP - NPN DEVICES

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

■

GENERAL PURPOSE SWITCHING

GENERAL PURPOSE AMPLIFIER

■

DESCRIPTION

The 2N6036 and 2N6039 are complementary

silicon power Darlington transistors mounted in

Jedec SOT-32 plastic package.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

R₁Typ. = 7 KΩ

R₂Typ. = 230 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

PNP

NPN

2N6036

2N6039

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

I_CM

I_B

P_tot

T_stg

T_j

Collector Peak Current

Base Current

Total Dissipation at T_c≤ 25 C

Storage Temperature

Max. Operating Junction Temperature

0.1

^oC

-65 to 150

150

For PNP types voltage and current values are negative.

1/6

December 2000

12 3 4 5 6

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