Datasheet > 2N6035

2N6035

更新时间： 2024-11-25 02:54:23

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描述
SILICON POWER DARLINGTON TRANSISTORS

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数据手册

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2N6035 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

(PNP)

(NPN)

SILICON POWER DARLINGTON TRANSISTORS

2N6034, 2N6035, 2N6036

2N6037, 2N6038, 2N6039

TO126

Plastic Package

Designed for General -Purpose Amplifier & Low Speed Switching Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

2n6034 2N6035 2N6036 UNIT

2n6037 2N6038 2N6039

V_CBO

V_CEO

V_EBO

I_C

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Current (Peak Value)

Base Current

Total Power Dissipation @ Tc=25ºC

Derate above 25^oC

Total Power Dissipation @ Ta=25ºC

Derate above 25^oC

W/ºC

5.0

4.0

8.0

100

I_B

P_D

0.32

1.5

P_D

0.012

W/ºC

T_j, T_stg

Operating And Storage Junction

Temperature Range

-65 to +150

ºC

THERMAL RESISTANCE

Junction to ambient

Junction to case

R_th(j-a)

R_th(j-c)

83.3

3.12

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

V_CEO(sus)

I_C=100mA, I_B=0

Collector Emitter (sus) Voltage

2N6034,2N6037

2N6035, 2N6038

2N6036, 2N6039

Collector Cut off Current

I_CEO

V_CE=40V, I_B=0

V_CE=60V, I_B=0

V_CE=80V, I_B=0

2N6034,2N6037

2N6035, 2N6038

2N6036, 2N6039

100

µA

Continental Device India Limited

Data Sheet

Page 1 of 4

12 3 4

中文翻译

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