Datasheet > 2N6035

2N6035

更新时间： 2024-02-13 11:36:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
8页	114K
描述
Plastic Darlington Complementary Silicon Power Transistors

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2N6035 数据手册

ON Semiconductor⁾

PNP

2N6035

Plastic Darlington

Complementary Silicon Power

Transistors

. . . designed for general–purpose amplifier and low–speed

switching applications.

2N6036

NPN

2N6038

2N6039

• High DC Current Gain —

= 2000 (Typ) @ I = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

= 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

*ON Semiconductor Preferred Device

CEO(sus)

DARLINGTON

4–AMPERE

(Min) — 2N6036, 2N6039

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 80 VOLTS

• Forward Biased Second Breakdown Current Capability

= 1.5 Adc @ 25 Vdc

S/b

• Monolithic Construction with Built–In Base–Emitter Resistors to

Limit Leakage Multiplication

40 WATTS

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic

Package

MAXIMUM RATINGS (1)

2N6035

2N6038

2N6036

2N6039

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

5.0

Collector Current — Continuous

Peak

4.0

8.0

CASE 77–09

TO–225AA TYPE

Base Current

100

mAdc

Total Power Dissipation @ T = 25_C

0.32

Watts

Derate above 25_C

W/_C

Total Power Dissipation @ T = 25_C

1.5

0.012

Watts

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

3.12

83.3

Unit

_C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

April, 2002 – Rev. 10

2N6035/D

12 3 4 5 6 7 8

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与2N6035相关器件

型号	品牌	获取价格	描述	数据表
2N6035/D	ETC	获取价格	Plastic Darlington Silicon Power Transistors
2N6035_06	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6035_08	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6035G	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6035LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
2N6035PNP	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6036	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
2N6036	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
2N6036	ONSEMI	获取价格	Plastic Darlington Complementary Silicon Power Transistors
2N6036	MCC	获取价格	PNP Darlington Power Transistor