Datasheet > 2N6035

2N6035

更新时间： 2024-11-24 06:17:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	105K
描述
Silicon PNP Power Transistors

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2N6035 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6034 2N6035 2N6036

DESCRIPTION

·With TO-126 package

·Complement to type 2N6037/6038/6039

·DARLINGTON

·High DC current gain

APPLICATIONS

·Designed for general-purpose amplifier

and low-speed switching applications

PINNING(see Fig.2)

DESCRIPTION

Emitter

Collector

Base

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

2N6034

2N6035

2N6036

2N6034

2N6035

2N6036

V_CBO

Collector-base voltage

Open emitter

-60

-80

-40

V_CEO

Collector-emitter voltage

Open base

-60

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-4

Collector current-peak

Base current

-8

-0.1

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

3.12

ꢀ/W

12 3

中文翻译

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2N6035LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
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2N6036	CDIL	获取价格	SILICON POWER DARLINGTON TRANSISTORS
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2N6036	MCC	获取价格	PNP Darlington Power Transistor