Datasheet > 2N5832

2N5832

更新时间： 2024-09-17 07:28:59

品牌	Logo	应用领域
SECOS		晶体晶体管放大器
页数	文件大小	规格书
1页	78K
描述
NPN Plastic Encapsulated Transistor

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技术参数
数据手册

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2N5832 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.62

2N5832 数据手册

2N5832

0.6 A, 160 V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



General Purpose Switching Transistor

TO-92

Millimeter

REF.

Min.

Max.

4.70

4.40

4.30

12.70

3.30

0.36

Collector

3.81

0.56

0.51



1.27 TYP.

1.10

2.42

0.36



Base

2.66

0.76



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

160

Collector to Emitter Voltage

Emitter to Base Voltage

140

0.6

Collector Current - Continuous

Collector Power Dissipation

Thermal resistance, junction to ambient

Junction, Storage Temperature

P_C

625

°C / W

°C

R_θJA

T_J, T_STG

200

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

160

I_C= 0.1mA, I_E= 0A

140

I_C= 1mA, I_B= 0A

I_E= 0.01mA, I_C= 0A

V_CB= 120V, I_E= 0 A

V_EB= 4V, I_C=0 mA

V_CE= 5V, I_C= 10mA

I_C= 50mA, I_B= 5mA

V_CE= 5V, I_C= 1mA

0.05

500

0.25

μA

Emitter Cut-Off Current

I_EBO

DC Current Gain

h_FE

175

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Base to Emitter Voltage

V_CE(sat)

V_BE(sat)

V_BE

0.8

Collector output capacitance

Transition frequency

C_ob

V_CB= 10V, I_E= 0 mA, f=1MHz

f_T

100

MHz V_CE= 10V, I_C= 1mA , f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

29-Dec-2010 Rev. A

Page 1 of 1

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