生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.6 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
配置: | Single | 最小直流电流增益 (hFE): | 10 |
最高工作温度: | 175 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 57 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 5 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5839E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | |
2N5840 | MOTOROLA |
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HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS | |
2N5840 | JMNIC |
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Silicon NPN Power Transistors | |
2N5840 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N5840 | ISC |
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Silicon NPN Power Transistors | |
2N5840 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO3 | |
2N5840 | APITECH |
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Transistor, TO3-3 | |
2N5840 | ASI |
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Transistor | |
2N5840 | RENESAS |
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TRANSISTOR,BJT,NPN,375V V(BR)CEO,3A I(C),TO-3VAR | |
2N5840 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |