生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | compliant | 风险等级: | 5.77 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-3 | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5840 | MOTOROLA |
获取价格 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS | |
2N5840 | JMNIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5840 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2N5840 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2N5840 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO3 | |
2N5840 | APITECH |
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Transistor, TO3-3 | |
2N5840 | ASI |
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Transistor | |
2N5840 | RENESAS |
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TRANSISTOR,BJT,NPN,375V V(BR)CEO,3A I(C),TO-3VAR | |
2N5840 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5841 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 100MA I(C) | TO-72 |