Datasheet > 2N5840

2N5840

更新时间： 2024-11-09 06:18:11

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2N5840 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2N5838 2N5839 2N5840

DESCRIPTION

·With TO-3 package

·Low collector-emitter saturation voltage

APPLICATIONS

·For use in switching power supply applications

and other inductive switching circuits.

PINNING

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5838

2N5839

2N5840

2N5838

2N5839

2N5840

275

V_CBO

Collector-base voltage

Open emitter

300

375

250

275

350

V_CEO

Collector-emitter voltage

Open base

Open collector

T_C=25℃

V_EBO

I_C

Emitter-base voltage

Collector current

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

100

150

-65~200

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.25

℃/W

JMnic

12 3

中文翻译

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与2N5840相关器件

型号	品牌	获取价格	描述	数据表
2N5841	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 100MA I(C) \| TO-72
2N5842	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 100MA I(C) \| TO-72
2N5843	ETC	获取价格	SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N5844	ETC	获取价格	SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
2N5845	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 600MA I(C) \| TO-92
2N5845A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 600MA I(C) \| TO-92
2N5849	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 24V V(BR)CEO \| 7A I(C) \| STX-10
2N585	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 24V V(BR)CEO \| 200MA I(C) \| TO-1
2N5851	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-72
2N5852	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 100MA I(C) \| TO-72