2N5832-BP

更新时间： 2024-11-07 13:04:03

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管放大器
页数	文件大小	规格书
1页	70K
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中文翻译

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数据手册

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2N5832-BP 数据手册

M C C

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21201 Itasca Street Chatsworth

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2N5832

Features

Through Hole Package

Plastic-case Bipolar

NPN Transistor

Pin Configuration

Bottom View

Electrical Characteristics @ 25°C Unless Otherwise Specified

TO-92

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=300mAdc)

140

160

5.0

Vdc

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Vdc

Collector-Base Breakdown Current

(V_CE=120Vdc)

nAdc

ON CHARACTERISTICS

h_FE

DC Current Gain*

175

500

0.2

(I_C=10mAdc, V_CE=5.0Vdc)

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=10mAdc)

Vdc

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc)

Output Capacitance

100

MHz

C_ob

4.0

----

Noise Figure

DIMENSIONS

INCHES

MIN

.175

.500

.016

.135

.095

MIN

DIM

MAX

4.70

---

0.63

3.68

2.67

NOTE

.185

---

.020

.145

.105

4.45

4.46

12.7

0.41

3.43

2.42

Note:

Maximum at typical JEDEC condition

(BR)CER @ R=10 OHMS

www.mccsemi.com

中文翻译

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