是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.45 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 250 V |
最小直流电流增益 (hFE): | 8 | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5838E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | |
2N5839 | JMNIC |
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Silicon NPN Power Transistors | |
2N5839 | MOTOROLA |
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HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS | |
2N5839 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 275V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5839 | RENESAS |
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3A, 275V, NPN, Si, POWER TRANSISTOR, TO-204AA | |
2N5839 | APITECH |
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Transistor, TO3-3 | |
2N5839 | ASI |
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Transistor | |
2N5839 | ISC |
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Silicon NPN Power Transistors | |
2N5839 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N5839E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, |