型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5839E3 | MICROSEMI |
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Power Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, | |
2N5840 | MOTOROLA |
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HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS | |
2N5840 | JMNIC |
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Silicon NPN Power Transistors | |
2N5840 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N5840 | ISC |
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Silicon NPN Power Transistors | |
2N5840 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO3 | |
2N5840 | APITECH |
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Transistor, TO3-3 | |
2N5840 | ASI |
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Transistor | |
2N5840 | RENESAS |
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TRANSISTOR,BJT,NPN,375V V(BR)CEO,3A I(C),TO-3VAR | |
2N5840 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 3A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |