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2N5838 PDF预览

2N5838

更新时间: 2024-11-07 06:18:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 117K
描述
Silicon NPN Power Transistors

2N5838 数据手册

 浏览型号2N5838的Datasheet PDF文件第2页浏览型号2N5838的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5838 2N5839 2N5840  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High breakdown voltage  
APPLICATIONS  
·For use in switching power supply and  
other inductive switching circuits.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBO
PARAMETER  
CONDITIONS  
VALU
275  
300  
375  
250  
275  
350  
6
UNIT  
2N5838  
2N5839  
2N5840  
2N5838  
2N5839  
2N5840  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
3
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
150  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.25  
/W  

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