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2N5193LEADFREE PDF预览

2N5193LEADFREE

更新时间: 2024-11-28 12:59:59
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2N5193LEADFREE 数据手册

 浏览型号2N5193LEADFREE的Datasheet PDF文件第2页 
TM  
2N5193  
2N5194  
2N5195  
Central  
Semiconductor Corp.  
PNP SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5193 Series  
types are Silicon PNP Power Transistors, manufactured  
by the epitaxial base process, designed for medium  
power amplifier and switching applications.  
These devices are complementary to the NPN 2N5190  
Series types.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
2N5193  
40  
2N5194  
60  
2N5195  
80  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Base Current  
V
V
V
CBO  
CEO  
EBO  
40  
60  
80  
V
5.0  
V
I
4.0  
A
C
I
1.0  
A
B
Power Dissipation (T =25°C)  
P
40  
W
C
D
Operating and Storage Junction Temperature  
Thermal Resistance (Junction to Case)  
T , T  
stg  
-65 to +150  
3.12  
°C  
°C/W  
J
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
=Rated V  
=Rated V  
=5.0V  
μA  
μA  
mA  
mA  
V
CBO  
CEX  
CEO  
EBO  
CB  
CE  
CE  
EB  
CBO  
, V =1.5V  
CEO EB  
CEO  
1.0  
BV  
BV  
BV  
I =100mA (2N5193)  
40  
60  
80  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
I =100mA (2N5194)  
V
C
I =100mA (2N5195)  
V
C
V
V
V
I =1.5A, I =150mA  
0.6  
1.4  
1.2  
100  
80  
V
C
B
I =4.0A, I =1.0A  
V
C
B
V
=2.0V, I =1.5A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=2.0V, I =1.5A (2N5193, 2N5194)  
25  
20  
C
=2.0V, I =1.5A (2N5195)  
FE  
C
=2.0V, I =4.0A (2N5193, 2N5194)  
10  
FE  
C
=2.0V, I =4.0A (2N5195)  
7.0  
2.0  
FE  
C
f
=10V, I =1.0A, f=1.0MHz  
MHz  
T
C
R1 (10-February 2009)  

2N5193LEADFREE 替代型号

型号 品牌 替代类型 描述 数据表
2N5194 CENTRAL

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