2N5195

更新时间： 2024-11-08 22:45:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管局域网
页数	文件大小	规格书
8页	103K
描述
Silicon PNP Power Transistors(4 AMPERE)

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替代型号

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2N5195 数据手册

ON Semiconductor⁾

2N5194

Silicon PNP Power Transistors

2N5195

*ON Semiconductor Preferred Device

. . . for use in power amplifier and switching circuits, — excellent

safe area limits. Complement to NPN 2N5191, 2N5192

4 AMPERE

POWER TRANSISTORS

SILICON PNP

60–80 VOLTS

*MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

2N5194

2N5195

Unit

Vdc

Adc

CEO

5.0

4.0

1.0

Base Current

Total Power Dissipation @ T = 25_C

320

Watts

mW/_C

_C/W

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

CASE 77–09

TO–225AA TYPE

Symbol

Max

Unit

Thermal Resistance, Junction to Case

3.12

_C/W

*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I = 0.1 Adc, I = 0)

Vdc

CEO(sus)

2N5194

2N5195

—

Collector Cutoff Current

mAdc

CEO

= 60 Vdc, I = 0)

2N5194

2N5195

—

1.0

= 80 Vdc, I = 0)

Collector Cutoff Current

CEX

= 60 Vdc, V

= 80 Vdc, V

= 60 Vdc, V

= 80 Vdc, V

= 1.5 Vdc)

2N5194

2N5195

2N5194

2N5195

—

0.1

2.0

BE(off)

= 1.5 Vdc, T = 125_C)

Collector Cutoff Current

mAdc

CBO

= 60 Vdc, I = 0)

2N5194

2N5195

—

0.1

= 80 Vdc, I = 0)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

—

1.0

EBO

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

April, 2002 – Rev. 10

2N5194/D

12 3 4 5 6 7 8

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2N5195 替代型号

型号	品牌	替代类型	描述	数据表
2N5195G	ONSEMI	类似代替	Silicon PNP Power Transistors

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