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2N5195 PDF预览

2N5195

更新时间: 2024-11-27 22:45:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
8页 103K
描述
Silicon PNP Power Transistors(4 AMPERE)

2N5195 数据手册

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ON Semiconductor)  
2N5194  
Silicon PNP Power Transistors  
*
2N5195  
*ON Semiconductor Preferred Device  
. . . for use in power amplifier and switching circuits, — excellent  
safe area limits. Complement to NPN 2N5191, 2N5192  
4 AMPERE  
POWER TRANSISTORS  
SILICON PNP  
60–80 VOLTS  
*MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
Symbol  
2N5194  
60  
2N5195  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
V
60  
80  
CB  
EB  
V
5.0  
4.0  
1.0  
I
C
Base Current  
I
B
Total Power Dissipation @ T = 25_C  
P
40  
320  
Watts  
mW/_C  
_C/W  
STYLE 1:  
C
D
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
Derate above 25_C  
3
2
1
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
–65 to +150  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 77–09  
TO–225AA TYPE  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
3.12  
_C/W  
JC  
*ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
(I = 0.1 Adc, I = 0)  
V
Vdc  
CEO(sus)  
2N5194  
2N5195  
60  
80  
C
B
Collector Cutoff Current  
I
mAdc  
mAdc  
CEO  
(V  
CE  
(V  
CE  
= 60 Vdc, I = 0)  
2N5194  
2N5195  
1.0  
1.0  
B
= 80 Vdc, I = 0)  
B
Collector Cutoff Current  
I
CEX  
(V  
CE  
(V  
CE  
(V  
CE  
(V  
CE  
= 60 Vdc, V  
= 80 Vdc, V  
= 60 Vdc, V  
= 80 Vdc, V  
= 1.5 Vdc)  
= 1.5 Vdc)  
2N5194  
2N5195  
2N5194  
2N5195  
0.1  
0.1  
2.0  
2.0  
BE(off)  
BE(off)  
BE(off)  
BE(off)  
= 1.5 Vdc, T = 125_C)  
C
C
= 1.5 Vdc, T = 125_C)  
Collector Cutoff Current  
I
mAdc  
mAdc  
CBO  
(V  
CB  
(V  
CB  
= 60 Vdc, I = 0)  
2N5194  
2N5195  
0.1  
0.1  
E
= 80 Vdc, I = 0)  
E
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
I
1.0  
EBO  
BE  
C
*Indicates JEDEC Registered Data.  
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N5194/D  

2N5195 替代型号

型号 品牌 替代类型 描述 数据表
2N5195G ONSEMI

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