Datasheet > 2N5196-E3

2N5196-E3

更新时间： 2024-11-29 08:40:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	84K
描述
Small Signal Field-Effect Transistor, N-Channel, Junction FET

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2N5196-E3 数据手册

2N5196/5197/5198/5199

Vishay Siliconix

Monolithic N-Channel JFET Duals

PRODUCT SUMMARY

Part Number V_GS(off)(V) V_(BR)GSSMin (V) g_fsMin (mS) I_GMax (pA) ꢀ V_GS1– V_GS2ꢀ Max (mV)

2N5196

2N5197

2N5198

2N5199

–0.7 to –4

–50

–15

FEATURES

BENEFITS

APPLICATIONS

D Monolithic Design

D High Slew Rate

D Tight Differential Match vs. Current

D Wideband Differential Amps

D Improved Op Amp Speed, Settling Time

D High-Speed, Temp-Compensated,

Accuracy

Single-Ended Input Amps

D Low Offset/Drift Voltage

D Low Gate Leakage: 5 pA

D Low Noise

D Minimum Input Error/Trimming Requirement

D Insignificant Signal Loss/Error Voltage

D High System Sensitivity

D High Speed Comparators

D Impedance Converters

D High CMRR: 100 dB

D Minimum Error with Large Input Signal

DESCRIPTION

The 2N5196/5197/5198/5199 JFET duals are designed for

high-performance differential amplification for a wide range of

precision test instrumentation applications. This series

features tightly matched specs, low gate leakage for accuracy,

and wide dynamic range with I_Gguaranteed at V_DG= 20 V.

The hermetically-sealed TO-71 package is available with full

military processing (see Military Information and the

2N5545/5546/5547JANTX/JANTXV data sheet).

For similar products see the low-noise U/SST401 series, the

high-gain 2N5911/5912, and the low-leakage U421/423 data

sheets.

TO-71

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Power Dissipation :

Notes

Per Side . . . . . . . . . . . . . . . . . . . . . . . . 250 mW

Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C

a. Derate 2 mW/_C above 85_C

b. Derate 4 mW/_C above 85_C

Document Number: 70252

S-04031—Rev. D, 04-Jun-01

www.vishay.com

8-1

12 3 4 5 6 7

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与2N5196-E3相关器件

型号	品牌	获取价格	描述	数据表
2N5197	NJSEMI	获取价格	MONOLITHIC DUAL N-CHANNEL JFETS
2N5197	INTERSIL	获取价格	N-CHANNEL JFET
2N5197	VISHAY	获取价格	Monolithic N-Channel JFET Duals
2N5198	VISHAY	获取价格	Monolithic N-Channel JFET Duals
2N5198	INTERSIL	获取价格	N-CHANNEL JFET
2N5198	NJSEMI	获取价格	MONOLITHIC DUAL N-CHANNEL JFETS
2N5198-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, N-Channel, Junction FET,
2N5199	VISHAY	获取价格	Monolithic N-Channel JFET Duals
2N5199	NJSEMI	获取价格	MONOLITHIC DUAL N-CHANNEL JFETS
2N5199	INTERSIL	获取价格	N-CHANNEL JFET