Datasheet > 2N5202PBFREE

2N5202PBFREE

更新时间： 2024-02-16 12:08:45

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	406K
描述
Power Bipolar Transistor,

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2N5202PBFREE 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Base Number Matches：	1

2N5202PBFREE 数据手册

2N5202

www.centralsemi.com

SILICON

NPN POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N5202 is a silicon

NPN power transistor mounted in a hermetically sealed

metal case, designed for general purpose amplifier and

switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

100

CBO

CER

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Peak Collector Current

4.0

5.0

Continuous Base Current

Power Dissipation

2.0

°C

°C/W

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +200

5.0

stg



ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=100V, V =1.5V

CEV

EBO

=100V, V =1.5V, T =150°C

=6.0V

I =200mA

CEO

CER

I =200mA, R =50Ω

I =4.0A, I =400mA

1.2

2.0

CE(SAT)

BE(SAT)

I =4.0A, I =400mA

=1.2V, I =4.0A

100

|h |

=10V, I =500mA

6.0

=10V, f=1.0MHz

=40V, tp=1.0s

175

400

0.4

s/b

=4.0V, R =50ꢀ, L=50μH

s/b

=30V, I =4.0A, I =I =0.8A

400

1200

400

B1 B2

=30V, I =4.0A, I =I =0.8A

B1 B2

=30V, I =4.0A, I =I =0.8A

B1 B2

=30V, I =4.0A, I =I =0.8A

B1 B2

R0 (15-January 2019)

12 3

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