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2N5195G PDF预览

2N5195G

更新时间: 2024-11-09 03:56:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
6页 87K
描述
Silicon PNP Power Transistors

2N5195G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.78Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:224311
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-225 CASE 77-09
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):7
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

2N5195G 数据手册

 浏览型号2N5195G的Datasheet PDF文件第2页浏览型号2N5195G的Datasheet PDF文件第3页浏览型号2N5195G的Datasheet PDF文件第4页浏览型号2N5195G的Datasheet PDF文件第5页浏览型号2N5195G的Datasheet PDF文件第6页 
2N5194, 2N5195  
Preferred Devices  
Silicon PNP Power  
Transistors  
These devices are designed for use in power amplifier and switching  
circuits; excellent safe area limits. Complement to NPN 2N5191,  
2N5192.  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
4 AMPERE  
POWER TRANSISTORS  
PNP SILICON  
MAXIMUM RATINGS (Note 1)  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol 2N5194 2N5195 Unit  
60 − 80 VOLTS  
V
60  
60  
80  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
4.0  
1.0  
I
C
I
B
Base Current  
Total Device Dissipation @ T = 25°C  
P
40  
320  
W
W/°C  
TO−225AA  
CASE 77−09  
STYLE 1  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
°C/W  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Case  
q
3.12  
°C/W  
JC  
YWW  
2
N519xG  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC registered data.  
Y
= Year  
WW  
= Work Week  
2N519x = Device Code  
x = 4 or 5  
G
= Pb−Free Package  
ORDERING INFORMATION  
Shipping  
Device  
2N5194  
Package  
TO−225  
500 Units / Bulk  
500 Units / Bulk  
2N5194G  
TO−225  
(Pb−Free)  
2N5195  
TO−225  
500 Units / Bulk  
500 Units / Bulk  
2N5195G  
TO−225  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 12  
2N5194/D  
 

2N5195G 替代型号

型号 品牌 替代类型 描述 数据表
2N5195 ONSEMI

类似代替

Silicon PNP Power Transistors(4 AMPERE)
NTE185 NTE

功能相似

Silicon Complementary Transistors Audio Power Amp, Switch
2N5195 STMICROELECTRONICS

功能相似

MEDIUM POWER PNP SILICON TRANSISTOR

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