2N5194, 2N5195
Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits. Complement to NPN 2N5191,
2N5192.
http://onsemi.com
Features
• Pb−Free Packages are Available*
4 AMPERE
POWER TRANSISTORS
PNP SILICON
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol 2N5194 2N5195 Unit
60 − 80 VOLTS
V
60
60
80
80
Vdc
Vdc
Vdc
Adc
Adc
CEO
V
CB
EB
V
5.0
4.0
1.0
I
C
I
B
Base Current
Total Device Dissipation @ T = 25°C
P
40
320
W
W/°C
TO−225AA
CASE 77−09
STYLE 1
C
D
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
J
–65 to +150
°C/W
stg
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
q
3.12
°C/W
JC
YWW
2
N519xG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
Y
= Year
WW
= Work Week
2N519x = Device Code
x = 4 or 5
G
= Pb−Free Package
ORDERING INFORMATION
Shipping
Device
2N5194
Package
TO−225
500 Units / Bulk
500 Units / Bulk
2N5194G
TO−225
(Pb−Free)
2N5195
TO−225
500 Units / Bulk
500 Units / Bulk
2N5195G
TO−225
(Pb−Free)
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2006 − Rev. 12
2N5194/D