Datasheet > 2N5195

2N5195

更新时间： 2024-11-28 06:23:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管局域网
页数	文件大小	规格书
3页	46K
描述
Silicon PNP Power Transistors

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中文翻译

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2N5195 数据手册

Product Specification

www.jmnic.com

Silicon PNP Power Transistors

2N5193 2N5194 2N5195

DESCRIPTION

·With TO-126 package

·Complement to type 2N5190,2N5191,2N5192

·Excellent safe operating area

APPLICATIONS

·For use in medium power linear and

switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

-60

-80

-40

-60

-80

-5

UNIT

2N5193

2N5194

2N5195

2N5193

2N5194

2N5195

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-4

Collector current-Peak

Base current

-7

-1

P_D

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance junction to case

3.12

℃/W

JMnic

12 3

中文翻译

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