是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.3 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5194PBFREE | CENTRAL |
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Power Bipolar Transistor, | |
2N5194TIN/LEAD | CENTRAL |
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Power Bipolar Transistor, | |
2N5195 | JMNIC |
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Silicon PNP Power Transistors | |
2N5195 | NJSEMI |
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SI PNP POWER BJT | |
2N5195 | STMICROELECTRONICS |
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MEDIUM POWER PNP SILICON TRANSISTOR | |
2N5195 | ONSEMI |
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Silicon PNP Power Transistors(4 AMPERE) | |
2N5195 | CENTRAL |
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PNP SILICON TRANSISTOR GENERAL PURPOSE POWER | |
2N5195 | SAVANTIC |
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Silicon PNP Power Transistors | |
2N5195 | ISC |
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Silicon PNP Power Transistors | |
2N5195_00 | STMICROELECTRONICS |
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MEDIUM POWER PNP SILICON TRANSISTOR |